BAS32L,135(2008) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAS32L,135 Datasheet PDF : 10 Pages
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NXP Semiconductors
BAS32L
High-speed switching diode
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max
200
+200
+200
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
Unit
°C
°C
°C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max
[1] -
-
350
-
-
300
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
VF
forward voltage
IF = 5 mA
620 -
IF = 100 mA
-
-
IF = 100 mA; Tj = 100 °C
-
-
IR
reverse current
VR = 20 V
-
-
VR = 75 V
-
-
VR = 20 V; Tj = 150 °C
-
-
VR = 75 V; Tj = 150 °C
-
-
Cd
diode capacitance VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery
time
[1] -
-
VFR
forward recovery
voltage
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 50 mA; tr = 20 ns.
Max
750
1 000
930
25
5
50
100
2
4
2.5
Unit
mV
mV
mV
nA
µA
µA
µA
pF
ns
V
BAS32L_6
Product data sheet
Rev. 06 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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