BAS32L,115(2008) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAS32L,115 Datasheet PDF : 10 Pages
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NXP Semiconductors
BAS32L
High-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
3. Ordering information
Simplified outline
[1]
k
a
Graphic symbol
1
2
006aab040
Table 3. Ordering information
Type number Package
Name
Description
BAS32L
-
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
4. Marking
Table 4. Marking codes
Type number
BAS32L
[1] black: made in Philippines
brown: made in China
5. Limiting values
Marking code[1]
marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
[1] -
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak forward square wave
[2]
current
tp = 1 µs
-
tp = 1 ms
-
tp = 1 s
-
Ptot
total power dissipation
Tamb = 25 °C
[1] -
Max Unit
100
V
75
V
200
mA
450
mA
4
A
1
A
0.5
A
500
mW
BAS32L_6
Product data sheet
Rev. 06 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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