BAR80 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BAR80

Silicon RF Switching Diode

Siemens AG 

Electrical characteristics

at TA = 25 °C, unless otherwise specified.

Parameter

Reverse current

VR = 20 V

Forward voltage

IF = 100 mA

Diode capacitance

VR = 1 V,f = 1 MHz

VR = 3 V,f = 1 MHz

Forward resistance

f = 100MHz

IF = 5 mA

Series inductance to ground

Application information

Shunt signal isolation

IF = 10 mA, f = 2 GHz, RG = RL = 50 Ω

Shunt insertion loss

VR = 5 V, f = 2 GHz, RG = RL = 50 Ω

BAR 80

Symbol

IR

VF

CT

rf

Ls

min.

-

-

-

0.6

-

-

Value

typ. max.

-

20

0.92 1

1

1.6

0.92 1.3

0.5 0.7

0.14 -

Unit

nA

V

pF

Ω

nH

-

dB

-

23

-

IL

dB

-

0.15 -

Configuration of the shunt-diode

-A perfect ground is essential

for optimum isolation

-The anode pins should be used

as passage for RF

Semiconductor Group

2

Edition A02, 27.02.95

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