NES2527B-30 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
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Fabricante
NES2527B-30 Datasheet PDF : 4 Pages
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NES2527B-30
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power at 1 dB G.C.P *3
Linear Gain
Power Added Efficiency
3rd Order Intermodulation
Distortion
SYMBOL
Idss
VP
Rth
Pð1
GL
K add
IM3*1
MIN.
ðð
ð4.0
ðð
44.0
11.5
ðð
ðð
TYP.
18.0
ð2.6
1.3
45.0
13.0
40.0
ð42.0
MAX.
ðð
ðð
1.5
ðð
ðð
ðð
ðð
UNIT
A
V
°C/W
dBm
dB
%
dBc
TEST CONDITIONS
VDS = 2.5 V, VGS = 0 V
VDS = 2.5 V, IDS = 80 mA
Channel to Case
freq = 2.5/2.7 GHz
VDS = 10 V
IDS = 6.0 A (RF OFF)
*1 PO = 33.0 dBm, 'f = 1.0 MHz
RECOMMENDING OPERATING LIMITS
Rg*2
VDS
Tch
(:)
(V)
(°C)
30
to 10
to 130
G.C.P*3
to 3 dBcomp
Tcase
(°C)
to 62
*2 Rg is the series resistance between the gate supply and the FET gate.
*3 G.C.P: Gain Compression Point
2
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