B125C800DM Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
B125C800DM Datasheet PDF : 4 Pages
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www.vishay.com
B40C800DM thru B380C800DM
Vishay Semiconductors
50
TJ = 125 °C
10 ms Single Sine-Wave
40
30
20
10
1.0 Cycle
0
0
10
100
Number of Cycles at 50 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Revision: 19-Aug-11
3
Document Number: 88533
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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