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B125C800DM(2006) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
B125C800DM
(Rev.:2006)
Vishay
Vishay Semiconductors Vishay
B125C800DM Datasheet PDF : 4 Pages
1 2 3 4
B40C800DM thru B380C800DM
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
Maximum instantaneous forward
voltage drop per diode
at 0.9 A
VF
1.0
Maximum reverse current at rated
repetitive peak voltage per diode
IR
10
UNIT
V
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Typical thermal resistance (1)
RθJA
RθJL
40
15
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g)
B38C800DM-E3/45
0.416
PREFERRED PACKAGE CODE
45
BASE QUANTITY
50
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.0
0.8
Capacitive Load
50 to 60 Hz
Resistive or Inductive Load
0.6
0 - 10 µF
10 - 100 µF
> 100 µF
0.4
Mounted on P.C.B. with 0.06"
0.2 (1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0
0
20 40 60 80
100 120 140
Ambient Temperature (°C)
Figure 1. Derating Curves Output Rectified Current for
B40C800D...B125C800DM
1.0
0.8
Capacitive Load
0.6
50 to 60 Hz
Resistive or Inductive Load
0 - 10 µF
10 - 100 µF
> 100 µF
0.4
Mounted on P.C.B. with 0.06"
0.2 (1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0
0
20
40
60
80
100 120 140
Ambient Temperature (°C)
Figure 2. Derating Curves Output Rectified Current for
B250C800D...B360C800DM
www.vishay.com
2
Document Number 88533
09-Oct-06

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