AS5C512K8F-15/IT Ver la hoja de datos (PDF) - Austin Semiconductor

Número de pieza

componentes Descripción

Fabricante

AS5C512K8F-15/IT

512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT

Austin Semiconductor 

Austin Semiconductor, Inc.

AC TEST CONDITIONS

Input pulse levels ...................................................... Vss to 3.0V

Input rise and fall times ......................................................... 3ns

Input timing reference levels ............................................... 1.5V

Output reference levels ........................................................ 1.5V

Output load ................................................. See Figures 1 and 2

SRAM

AS5C512K8

Q

167 ohms

1.73V

Q

167 ohms

1.73V

C=30pF

C=5pF

Fig. 1 Output Load

Equivalent

NOTES

1. All voltages referenced to V (GND).

SS

2. -2V for pulse width < 20ns

3. I is dependent on output loading and cycle rates.

CC

4. This parameter is guaranteed but not tested.

5. Test conditions as specified with the output loading

as shown in Fig. 1 unless otherwise noted.

6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE

are specified with CL = 5pF as in Fig. 2. Transition is

measured ±200mV from steady state voltage.

7. At any given temperature and voltage condition,

tHZCE is less than tLZCE, and tHZWE is less than

tLZWE.

8. WE\ is HIGH for READ cycle.

Fig. 2 Output Load

Equivalent

9. Device is continuously selected. Chip enables and

output enables are held in their active state.

10. Address valid prior to, or coincident with, latest

occurring chip enable.

11. tRC = Read Cycle Time.

12. Chip enable and write enable can initiate and

terminate a WRITE cycle.

13. Output enable (OE\) is inactive (HIGH).

14. Output enable (OE\) is active (LOW).

15. ASI does not warrant functionality nor reliability of

any product in which the junction temperature

exceeds 150°C. Care should be taken to limit power to

acceptable levels.

DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)

DESCRIPTION

CONDITIONS

SYM MIN MAX UNITS NOTES

Vcc for Retention Data

CE\ > VCC -0.2V

VIN > VCC -0.2 or 0.2V

VDR

2

V

Data Retention Current

Vcc = 2.0V ICCDR

800 uA

Chip Deselect to Data

tCDR

0

ns

4

Operation Recovery Time

tR

10

ms

4, 11

AS5C512K8

Rev. 7.0 05/08

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

5

Share Link: