APT8020JFLL Ver la hoja de datos (PDF) - Microsemi Corporation

Número de pieza

componentes Descripción

Fabricante

APT8020JFLL

POWER MOS 7® FREDFET

Microsemi Corporation 

DYNAMIC CHARACTERISTICS

APT8020JFLL

Symbol Characteristic

Test Conditions

MIN TYP MAX UNIT

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

5200

1000

pF

190

Qg

Total Gate Charge 3

Qgs Gate-Source Charge

Qgd Gate-Drain ("Miller") Charge

VGS = 10V

VDD = 400V

ID = 33A @ 25°C

195

27

nC

130

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

RESISTIVE SWITCHING

12

VGS = 15V

VDD = 400V

ID = 33A @ 25°C

14

ns

39

RG = 0.6Ω

10

INDUCTIVE SWITCHING @ 25°C

VDD = 533V, VGS = 15V

760

ID = 33A, RG = 5Ω

715

µJ

INDUCTIVE SWITCHING @ 125°C

1250

VDD = 533V, VGS = 15V

ID = 33A, RG = 5Ω

780

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

IS

Continuous Source Current (Body Diode)

ISM Pulsed Source Current 1 (Body Diode)

33 Amps

132

VSD Diode Forward Voltage 2 (VGS = 0V, IS = -33A)

dv/dt

Peak Diode Recovery dv/dt 5

1.3 Volts

18 V/ns

trr

Reverse Recovery Time

(IS = -33A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

320

ns

650

Reverse Recovery Charge

Qrr

(IS = -33A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

1.4

µC

5.9

Peak Recovery Current

IRRM

(IS = -33A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

10.8

Amps

18.9

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN TYP MAX UNIT

RθJC

RθJA

Junction to Case

Junction to Ambient

0.24

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 5.51mH, RG = 25Ω, Peak IL = 33A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.

0.25

0.9

0.20

0.7

0.15

0.10

0.05

0

10-5

0.5

Note:

0.3

0.1

0.05

SINGLE PULSE

t1

t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Share Link: