APT30M75SLL Ver la hoja de datos (PDF) - Advanced Power Technology
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APT30M75SLL Datasheet PDF : 2 Pages
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DYNAMIC CHARACTERISTICS
APT30M75 BLL - SLL
Symbol Characteristic
Test Conditions
MIN TYP
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
3160
750
36
Qg
Total Gate Charge 3
VGS = 10V
59
Qgs
L Qgd
ICA td(on)
tr
HN td(off)
C tf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
E TE TION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC A Symbol
VA RM IS
D O ISM
A INF VSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
16
23
11
10
27
9
MIN TYP
t rr
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
390
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
6.0
dv/dt Peak Diode Recovery dv/dt 5
MAX
MAX
44
176
1.3
5
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.38
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.34mH, RG = 25W, Peak IL = 44A
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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