APT10035JFLL Ver la hoja de datos (PDF) - Advanced Power Technology
Número de pieza
componentes Descripción
Fabricante
APT10035JFLL Datasheet PDF : 5 Pages
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100
50
OPERATION HERE
LIMITED BY RDS (ON)
10
100µS
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 28A
10mS
12
VDS=200V
VDS=500V
8
VDS=800V
4
0
0
50
100 150 200 250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
180
160
td(off)
140
120
100
80
VDD = 670V
RG = 5Ω
TJ = 125°C
L = 100µH
60
40
20
td(on)
0
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
VDD = 670V
RG = 5Ω
Eon
2000 TJ = 125°C
L = 100µH
1500
EON includes
diode reverse recovery.
1000
500
Eoff
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
APT10035JFLL
Ciss
1,000
Coss
100
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
VDD = 670V
RG = 5Ω
TJ = 125°C
60 L = 100µH
tf
40
tr
20
0
0
10
20
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
4000
Eoff
3000
Eon
2000
VDD = 670V
ID = 28A
1000
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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