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APT10035JFLL Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza
componentes Descripción
Fabricante
APT10035JFLL
APT
Advanced Power Technology  APT
APT10035JFLL Datasheet PDF : 5 Pages
1 2 3 4 5
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 500V
ID = 28A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 500V
ID = 28A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 670V, VGS = 15V
ID = 28A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 670V VGS = 15V
ID = 28A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -25A)
dv/dt
Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -25A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -25A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM
(IS = -25A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT10035JFLL
MIN TYP MAX UNIT
5185
881
pF
160
186
24
nC
122
12
10
ns
36
9
900
623
µJ
1423
779
MIN TYP MAX UNIT
25 Amps
100
1.3 Volts
18 V/ns
320
ns
650
3.60
µC
9.72
16.50
24.70
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.24
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.60mH, RG = 25Ω, Peak IL = 25A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID24A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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