5SHY42L6500 Ver la hoja de datos (PDF) - ABB
Número de pieza
componentes Descripción
Fabricante
5SHY42L6500 Datasheet PDF : 9 Pages
| |||
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current
Max. peak non-repetitive
surge on-state current
Limiting load integral
IT(RMS)
ITSM
I2t
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive ITSM
surge on-state current
Limiting load integral
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive ITSM
surge on-state current
Limiting load integral
I2t
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Stray inductance between LD
GCT and antiparallel diode
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
VT
IT = 4000 A, Tj = 125 °C
V(T0)
rT
Tj = 125 °C
IT = 1000...5000 A
Turn-on switching
Maximum rated values 1)
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
(see Fig. 14, 15)
Symbol Conditions
diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 3900 A
VD = 4000 V, ITM ≤ 5500 A
Symbol Conditions
tdon
tdon SF
tr
VD = 4000 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
Eon
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Max. controllable turn-off
current
Characteristic values
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
ITGQM1
ITGQM2
VDM ≤ VDRM,
Tj = 125°C,
RS = 0.35 Ω,
CCL = 20 µF,
LCL ≤ 0.3 µH
VD = 4000 V
ton > 100µs
VD = 4000 V
40µs < ton < 100µs
Symbol Conditions
tdoff
tdoff SF
Eoff
VD = 4000 V, Tj = 125 °C
VDM ≤ VDRM, RS = 0.35 Ω
ITGQ = 4000 A, Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 42L6500
typ
max Unit
1270 A
2000 A
40×103 A
2.4×106 A2s
26×103 A
3.38×106 A2s
17×103 A
4.34×106 A2s
300 nH
200 A/µs
typ
max Unit
3.8
4.1
V
1.9
2.0
V
0.48
0.54 mΩ
typ
max Unit
1000 A/µs
typ
max Unit
4
µs
7
µs
1
µs
2.5
J
typ
max Unit
4200 A
3900 A
typ
max Unit
8
µs
7
µs
44
tbd
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07
page 2 of 9
Share Link: 