5SHY42L6500 Ver la hoja de datos (PDF) - ABB
Número de pieza
componentes Descripción
Fabricante
5SHY42L6500 Datasheet PDF : 9 Pages
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VDRM =
ITGQM =
ITSM =
V(T0) =
rT
=
VDC-link =
6500 V
4200 A
26×103 A
2.0 V
0.54 mΩ
4000 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6500
PRELIMINARY
• High snubberless turn-off rating
• Wide temperature range
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Doc. No. 5SYA1245-00 Aug 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Symbol
VDRM
Conditions
Gate Unit energized
min
typ
Permanent DC voltage for VDC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
Characteristic values
Parameter
VRRM
Symbol Conditions
min
typ
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
36
40
min
typ
Pole-piece diameter
Dp
± 0.1 mm
85
Housing thickness
H
25.3
Weight
m
Surface creepage distance Ds
Anode to Gate
33
Air strike distance
Da
Anode to Gate
10
Length
l
± 1.0 mm
439
Height
h
± 1.0 mm
40
Width IGCT
w
± 1.0 mm
173
1) Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
6500 V
4000 V
17
V
max Unit
50 mA
max Unit
44
kN
max Unit
mm
25.8 mm
2.9
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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