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H11A5

PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupler

Infineon Technologies 

4N35/36/37/38—Characteristics TA=25°C

Emitter

Forward Voltage*

Reverse Current*

Capacitance

Detector

Breakdown Voltage, Collector-Emitter*

Breakdown Voltage, Emitter-Collector*

Breakdown Voltage, Collector-Base*

Leakage Current, Collector-Emitter*

Leakage Current, Collector-Emitter*

Capacitance, Collector-Emitter

Package

DC Current Transfer Ratio*

DC Current Transfer Ratio*

Resistance, Input to Output*

4N35/36/37

4N38

4N35/36/37

4N38

4N35/36/37

4N38

4N35/36/37

4N38

4N35/36/37

4N38

4N35/36/37

4N38

Coupling Capacitance

Switching Time*

* Indicates JEDEC registered value

H11A1 through H11A5—Characteristics TA=25°C

Emitter

Forward Voltage

H11A1–H11A4

H11A5

Reverse Current

Capacitance

Detector

Breakdown Voltage, Collector-Emitter

Breakdown Voltage, Emitter-Collector

Breakdown Voltage, Collector-Base

Leakage Current, Collector-Emitter

Capacitance, Collector-Emitter

Package

DC Current Transfer Ratio

H11A1

H11A2/3

H11A4

H11A5

Saturation Voltage, Collector-Emitter

Capacitance, Input to Output

Switching Time

Symbol

VF

IR

CO

Min.

0.9

Typ.

1.3

0.1

25

Max. Unit

1.5 V

1.7

10 µA

— pF

Condition

IF=10 mA

IF=10 mA, TA=–55°C

VR=6.0 V

VR=0, f=1.0 MHz

BVCEO 30

—

—

V

80 — —

IC=1.0 mA

BVECO 7.0 —

—

V

IE=100 µA

BVCBO 70

—

—

V

IC=100 µA, IB=1.0 µA

80 — — —

ICEO

ICEO

CCE

—

5.0 50

nA VCE=10 V, IF=0

— — 50

VCE=60 V, IF=0

—

—

500 µA VCE=30 V, IF=0, TA=100°C

— 6.0 —

VCE=60 V, IF=0, TA=100°C

—

6.0 —

pF

VCE=0

CTR

100 —

—

%

VCE=10 V, IF=10 mA,

20 — —

VCE=1.0 V, IF=20 mA

CTR

—

40 50 —

%

VCE=10 V, IF=10 mA,

—

30

—

—

TA=–55 to 100°C

RIO

1011 —

—

Ω

VIO=500 V

CIO

— 0.5 — pF f=1.0 MHz

tON, tOFF —

10

—

µs

IC=2.0 mA, RL=100 Ω, VCC=10 V

Symbol

VF

IR

C0

Min.

—

—

—

—

Typ.

1.1

1.1

—

50

Max. Unit

1.5 V

1.7

10 µA

— pF

Condition

IF=10 mA

VR=3.0 V

VR=0, f=1.0 MHz

BVCEO 30

—

—

V

IC=1.0 mA, IF=0 mA

BVECO 7.0 —

—

V

IE=100 µA, IF=0 mA

BVCBO 70

—

—

V

IC=10 µA, IF=0 mA

ICEO

—

5.0 50

nA VCE=10 V, IF=0 mA

CCE

—

6.0 —

pF

VCE=0

CTR

50

20

10

30

VCEsat —

CIO

—

tON, tOFF —

——%

——

——

——

— 0.4 V

0.5 — pF

3.0 — µs

VCE=10 V, IF=10 mA

ICE=0.5 mA, IF=10 mA

—

IC=2.0 mA, RL=100 Ω, VCE=10 V

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–55

Phototransistor, Industry Standard

March 27, 2000-00

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