IXFN21N100Q Ver la hoja de datos (PDF) - IXYS CORPORATION

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componentes Descripción

Fabricante

IXFN21N100Q

HiPerFET™ Power MOSFETs Q-Class

IXYS CORPORATION 

IXFN 21N100Q

10

8

VDS = 500 V

ID = 21 A

IG = 10 mA

6

4

2

0

0

40

80

120 160 200

Gate Charge - nC

Fig.7 Gate Charge Characteristic Curve

80

60

40

TJ = 125OC

TJ = 25OC

20

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD - Volts

Fig.9 Drain Current vs Drain to Source Voltage

1.000

30000

10000

1000

Ciss

Coss

f = 100kHz

Crss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

Fig.8 Capacitance Curves

0.100

0.010

0.001

10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

Fig.10 Transient Thermal Impedance

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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