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IXFN21N100Q Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXFN21N100Q
IXYS
IXYS CORPORATION IXYS
IXFN21N100Q Datasheet PDF : 4 Pages
1 2 3 4
IXFN 21N100Q
Symbol
gfs
Ciss
Coss
Crss
td(on)
t1r8
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 20 V; ID = 0.5 • ID25, pulse test
16 22
S
5900
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
550
pF
90
pF
21
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
18
ns
RG = 1 (External)
60
ns
12
ns
170
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
38
nC
75
nC
0.24 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
21 A
84 A
1.5 V
trr
250 ns
QRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
1.4
µC
IRM
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

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