2SK3018 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
2SK3018 Datasheet PDF : 4 Pages
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N-Channel Enhancement Mode MOSFET
2SK3018
• Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this
device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
• Applications
Interfacing, switching (30V, 100mA)
• Structure
Silicon N-channel
MOSFET
• External dimensions
③
①
②
②
①
③
Units:mm
SOT-23
SOT-323
①. Gate ②. Source ③. Drain
• Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Reverse
current
drain Continuous
Pulsed
Total power dissipation(Tc=25°C)
Channel temperature
VDSS
VGSS
ID
IDP*1
IDR
IDRP*1
PD*2
Tch
Storage temperature
Tstg
*1Pw≤10µs,Duty Cycle≤50%
*2With each pin mounted on the recommended lands
Limits
30
20
100
200
100
200
200
150
-55~+150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
• Equivalent circuit
Drain
Gate
*Gate
Protection
Diode
Source
*A protection diode is included between the
gate and the source terminals to protect the
diode against static electricity when the product
is in use. Use a protection circuit when the fixed
voltages are exceeded.
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
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