2SJ507 Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

2SJ507

Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±16 V, VDS = 0 V

VDS = −60 V, VGS = 0 V

V (BR) DSS ID = −10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −0.5 A

VGS = −10 V, ID = −0.5 A

VDS = −10 V, ID = −0.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

toff

Total gate charge (Gate−source

plus gate−drain)

Qg

VDD ≈ −48 V, VGS = −10 V,

Gate−source charge

Qgs

ID = −1 A

Gate−drain (“miller”) charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = −1 A, VGS = 0 V

IDR = −1 A, VGS = 0 V

dIDR / dt = 50 A / μs

Marking

2SJ507

Min Typ. Max Unit

—

—

±10

μA

—

— −100 μA

−60 —

—

V

−0.8 —

−2.0

V

— 0.72 1.0

Ω

—

0.5 0.7

0.5 1.0

—

S

— 170 —

—

25

—

pF

—

72

—

—

20

—

—

35

—

ns

—

30

—

— 135 —

—

5.6

—

—

3.9

—

nC

—

1.7

—

Min Typ. Max Unit

—

—

−1

A

—

—

−3

A

—

—

1.5

V

—

58

—

ns

— 72.5 —

nC

J507

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-16

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