2SD669A Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD669A Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB649/649A
·High breakdown voltage VCEO:120/160V
·High current 1.5A
·Low saturation voltage,excellent hFE linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD669
2SD669A
Open emitter
VALUE
180
180
UNIT
V
VCEO
Collector-emitter voltage
2SD669
2SD669A
Open base
120
V
160
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
1.5
A
ICM
Collector current-peak
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
Ta=25℃
TC=25℃
3
A
1
W
20
150
℃
-55~150
℃
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