2SD1409 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
Fabricante
2SD1409 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1409
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
VECF
Emitter-collector forward voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
COB
Collector output capacitance
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
CONDITIONS
IC=10mA; IB=0
IC=4A ;IB=0.04A
IC=4A ;IB=0.04A
IE=4A; IB=0
VCB=100V; IE=0
VEB=5V; IC=0
IC=2A ; VCE=2V
IC=4A ; VCE=2V
f=1MHz ; VCB=50V;IE=0
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
3.0
V
0.5
mA
3
mA
600
100
35
pF
IB1=-IB2=0.04A
VCC=100V ,RL=25Ω
1
μs
8
μs
5
μs
JMnic
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