2SC4015(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor
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2SC4015 Datasheet PDF : 4 Pages
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Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
Features
1) High breakdown voltage. (BVCEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at VCB=30V)
3) Ideal for chroma circuit.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
2SC4061K
0.2
Collector power
dissipation
2SC3415S
PC
2SC4015
0.3
1∗
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SC4061K 2SC3415S
SMT3
SPT
NP
NP
AN∗
−
T146
TP
3000
5000
2SC4015
ATV
NP
−
TV2
2500
Dimensions (Unit : mm)
2SC4061K
ROHM : SMT3
EIAJ : SC-59
0.3Min.
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
2SC3415S
4
2
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) Emitter
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
2SC4015
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
300
−
−
V
IC=50μA
300
−
−
V
IC=100μA
5
−
−
V
IE=50μA
−
−
0.5
μA VCB=200V
−
−
0.5
μA VEB=4V
−
−
2
V
IC/IB=50mA/5mA
56
−
120
−
VCE/IC=10V/10mA
50
100
−
MHz VCE=30V, IE=−10mA, f=30MHz
−
3
−
pF VCB=30V, IE=0A, f=1MHz
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
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