JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
Product Specification
2SC3842
MIN TYP. MAX UNIT
400
V
600
V
6
V
1.0
V
1.5
V
100 μA
100 μA
10
40
32
MHz
100
pF
2