SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1819M
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=100µA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=100A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=100µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
VBE
Base-emitter on voltage
IC=30mA ; VCE=10V
hFE-1
DC current gain
IC=5mA ; VCE=50V
hFE-2
DC current gain
IC=30mA ; VCE=10V
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IC=20mA ; VCE=30V
MIN TYP. MAX UNIT
300
V
300
V
7
V
1.5
V
1.2
V
50
250
30
5
pF
70
MHz
2