2SC1623(2018) Ver la hoja de datos (PDF) - Unisonic Technologies

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2SC1623
(Rev.:2018)

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

Unisonic Technologies 

2SC1623

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

Emitter to Base Voltage

VCEO

50

V

VEBO

5.0

V

Collector Current (DC)

Power Dissipation

IC

100

mA

PD

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

Collector Cutoff Current

ICBO

Emitter Cutoff Current

IEBO

DC Current Gain

hFE

Collector Saturation Voltage

VCE(SAT)

Base to Saturation Voltage

VBE(SAT)

Base Emitter Voltage

VBE

Gain Bandwidth Product

fT

Output Capacitance

COB

Note: Pulsed: PW ≤ 350μs, Duty Cycle ≤ 2%.

 CLASSIFICATION OF hFE

TEST CONDITIONS

VCB=60V, IE=0

VEB=5.0V, IC=0

VCE=6.0V, IC=1.0mA (Note 1)

IC=100mA, IB=10mA (Note 1)

IC=100mA, IB= 10mA (Note 1)

VCE=6.0V, IC=1.0mA (Note 1)

VCE= 6.0V, IE=-10mA

VCB= 6.0V, IE=0, f=1.0MHz

MIN TYP MAX UNIT

0.1 μA

0.1 μA

90

600

0.3

V

1.0

V

0.55

0.7

V

250

MHz

3.0

pF

RANK

RANGE

L4

90 ~ 180

L5

135 ~ 270

L6

200 ~ 400

L7

300 ~ 600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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