IXGH17N100AU1 Ver la hoja de datos (PDF) - IXYS CORPORATION

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Fabricante

IXGH17N100AU1

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXYS CORPORATION 

IXGH 17N100U1

IXGH 17N100AU1

Fig.17 Diode Transient Thermal resistance junction to case

1.00

0.10

0.01

0.001

0.01

0.1

1

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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