IXGH17N100U1 Ver la hoja de datos (PDF) - IXYS CORPORATION

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Fabricante

IXGH17N100U1

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXYS CORPORATION 

IXGH 17N100U1

IXGH 17N100AU1

Fig.7 Gate Charge

Fig.8 Turn-Off Safe Operating Area

15

13

VCE = 800

11

IC = 17A

9

IG = 10mA

7

5

3

1

0 10 20 30 40 50 60 70 80 90 100

Gate Charge - (nC)

Fig.9 Capacitance Curves

100

10

TJ = 125°C

dV/dt < 3V/ns

1

0.1

0.01

0

200 400 600 800 1000

VCE - Volts

2000

1750

f = 1MHz

1500

1250

Cies

1000

750

500

Coes

250

Cres

0

0

5

10

15

20

25

VCE - Volts

Fig.10 Transient Thermal Impedance

17N100g2.JNB

1

D=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

D=0.01

Single Pulse

D = Duty Cycle

0.01

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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