IXGH17N100AU1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH17N100AU1 Datasheet PDF : 6 Pages
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Symbol
gfs
Cies
Coes
C
res
Q
g
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
6 15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
1500
pF
210
pF
40
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
100 120 nC
20 30 nC
60 90 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES, RG = Roff = 82 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
17N100U1
17N100AU1
17N100AU1
100
ns
200
ns
500 1000 ns
750
ns
450 750 ns
3
mJ
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
100
ns
200
ns
2.5
mJ
700 1000 ns
17N100U1 1200 2000 ns
17N100AU1 750 1000 ns
17N100U1
8
mJ
17N100AU1
6
mJ
0.83 K/W
0.25
K/W
IXGH 17N100U1
IXGH 17N100AU1
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
16
VR = 540 V
TJ = 125°C 120
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 35
2.5 V
18 A
ns
50 ns
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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