2SB985 Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza

componentes Descripción

Fabricante

2SB985

PNP General Purpose Transistors

Weitron Technology 

2SB985

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO IC=-10μA, IE=0

V(BR)CEO IC=-1mA, IB=0

V(BR)EBO IE=-10μA, IC=0

ICBO

VCB=-40V, IE=0

IEBO

VEB=-4V, IC=0

hFE(1) VCE=-2V, IC=-100mA

hFE(2) VCE=-2V, IC=-3A

VCE(sat) IC=-2A, IB=-100mA

VBE(sat) IC=-2A, IB=-100mA

fT

VCE=-10V, IC=-50mA

Cob

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

-6

V

-1

μA

-1

μA

100

560

40

-0.7 V

-1.2 V

150

MHz

39

pF

CLASSIFICATION OF

Rank

Range

hFE(1)

R

100-200

S

140-280

T

200-400

U

280-560

WEITRON

2/5

http://www.weitron.com.tw

19-Feb-09

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