2SB709A Ver la hoja de datos (PDF) - Transys Electronics Limited

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componentes Descripción

Fabricante

2SB709A

SOT-23 PNP Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-23 Plastic-Encapsulated Transistors

2SB709A TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

0.2 W (Tamb=25℃)

Collector current

ICM:

-0.2 A

Collector-base voltage

V(BR)CBO:

-45 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

2. 4

1. 3

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

Test conditions

Ic= -10 µA, IE=0

Ic= -2 mA, IB=0

IE= -10 µA, IC=0

VCB= -20 V , IE=0

VCE= -10 V , IB=0

MIN

-45

-45

-7

DC current gain

hFE

VCE= -10V, IC= -2mA

160

Collector-emitter saturation voltage

Transition frequency

VCE(sat) IC=-100 mA, IB= -10mA

VCE= -10V, IC= -1mA

fT

60

f=200MHz

MAX UNIT

V

V

V

-0.1 µA

-100 µA

460

-0.5

V

MHz

CLASSIFICATION OF HFE

Rank

Range

Q

160-260

R

210-340

S

290-460

Marking

BR

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