2SB649 Ver la hoja de datos (PDF) - Secos Corporation.
Número de pieza
componentes Descripción
Fabricante
2SB649 Datasheet PDF : 2 Pages
| |||
Elektronische Bauelemente
2SB649/2SB649A
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
8.0±0.2
3.2±0.2
2.0±0.2
Power smplifier applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
Power dissipation
1.4±0.1
12 3
PCM : 1 W （Tamb=25℃）
Collector current
ICM : - 1.5 A
Collector-base voltage
V(BR)CBO : -180 V
Collector-emitter voltage
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
VCEO
2SB649 : -120 V
2SB649A : -160 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO Ic=-1mA ， IE=0
V(BR)CEO Ic=-10mA ，IB=0
V(BR)EBO
ICBO
IEBO
IE=-1mA， Ic=0
VCB=- 160 V, IE=0
VEB= -4V , IC =0
2SB649
2SB649A
-180
-120
-160
-5
DC current gain
hFE(1) *
2SB649
VCE= -5V, IC= -150 mA
60
2SB649A 60
hFE(2) * VCE=- 5V, IC = -500mA
30
MAX UNIT
V
V
V
-10
μA
-10
μA
320
200
Collector-emitter saturation voltage
VCE (sat) * IC =- 500 mA, IB=- 50mA
-1
V
Base-emitter voltage
VBE *
VCE=- 5V,IC=-150mA
Transition frequency
fT
VCE=-5V,, IC=- 150 mA
Collector output capacitance
Cob
VCB=-10 V , IE=0,f=1MHz
* The 2SB649 and 2SB649A are grouped by hFE1 as follows.
-1.5
V
140
MHz
27
pF
Rank
2SB649
2SB649A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
Any changing of specification will not be informed individual
Page 1 of 2
Share Link: 