2SB1625 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SB1625

Silicon PNP Darlington Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Darlington Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-5m A

VBEsat Base-emitter saturation voltage

IC=-5 A;IB=-5m A

ICBO

Collector cut-off current

VCB=-110V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

fT

Transition frequency

IC=0.5A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;RL=6Ω

IB1=-IB2=-5mA

VCC=-30V

‹ hFE classifications

O

P

5000-12000 6500-20000

Y

15000-30000

Product Specification

2SB1625

MIN TYP. MAX UNIT

-110

V

-2.5

V

-3.0

V

-100 μA

-100 μA

5000

100

MHz

110

pF

1.1

μs

3.2

μs

1.1

μs

2

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