2SB1119 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SB1119

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SB1 1 1 9

TRANSISTOR(PNP)

SOT-89-3L

FEATURES

z Small Flat Package

z LF Amplifier, Electronic Governor Applications

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-25

-25

-5

-1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC=-10µA,IE=0

-25

V

V(BR)CEO IC=-1mA,IB=0

-25

V

V(BR)EBO IE=-10µA,IC=0

-5

V

ICBO

VCB=-20V,IE=0

-100

nA

IEBO

VEB=-4V,IC=0

-100

nA

hFE(1)

VCE=-2V, IC=-50mA

100

560

hFE(2)

VCE=-2V, IC=-1A

40

VCE(sat) IC=-500mA,IB=-50mA

-0.7

V

VBE(sat) IC=-500mA,IB=-50mA

-1.2

V

Cob

VCB=-10V,IE=0, f=1MHz

25

pF

fT

VCE=-10V,IC=-50mA,

180

MHz

CLASSIFICATION OF hFE(1)

RANK

R

RANGE

100–200

MARKING

S

140–280

T

200–400

BB

U

280–560

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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