2SB1116AG-G-AB3-K(2018) Ver la hoja de datos (PDF) - Unisonic Technologies
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2SB1116AG-G-AB3-K Datasheet PDF : 5 Pages
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2SB1116/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
2SB1116
2SB1116A
VCBO
-60
-80
V
Collector to Emitter Voltage
2SB1116
2SB1116A
VCEO
-50
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
DC
IC
Pulse(Note2)
ICM
-1
A
-2
A
Total Power Dissipation
SOT-89
TO-92
PC
500
mW
750
mW
Junction Temperature
Operating Temperature
TJ
TOPR
+150
C
-20 ~ +85
°C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=-1A, IB=-50mA
Base Emitter On Voltage(Note)
Collector Cut-Off Current
VBE(ON) VCE=-2V, IC=-50mA
ICBO VCB=-60V, IE=0
Emitter Cut-Off Current
DC Current Gain(Note)
IEBO
hFE1
VEB=-6V, IC=0
VCE=-2V,
IC=-100mA
2SB1116
2SB1116A
hFE2 VCE=-2V, IC=-1A
Transition Frequency
Output Capacitance
fT
VCE=-2V, IC=-100mA
COB VCB=-10V, IE=0, f=1MHz
Turn On Time
Storage Time
Fall Time
tON
tSTG
tF
VCC=-10V, IC=-100mA
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V
Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%.
MIN
-600
135
135
81
70
CLASSIFICATION OF hFE1
TYP
-0.2
-0.9
-650
120
25
0.07
0.7
0.07
MAX
-0.3
-1.2
-700
-100
-100
600
400
UNIT
V
V
mV
nA
nA
MHz
pF
μs
μs
μs
RANK
hFE1
Y
135 ~ 270
G
200 ~ 400
L
300 ～ 600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R201-066.G
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