2SB1116(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

2SB1116
(Rev.:2011)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SB1116/A

„ TYPICAL CHARACTERISTICS

Static Characteristic

-100

IB=-250μA

IB=-200μA

-80

IB=-150μA

-60

IB=-100μA

-40

IB=-50μA

-20

0

0 -2

-4

-6 -8 -10

Collector-Emitter Voltage, VCE (V)

1000

100

DC Current Gain

VCE=-2V

10

1

-0.01

-0.1

-1

-10

Collector Current, Ic (mA)

PNP SILICON TRANSISTOR

Static Characteristic

-1.0

IB=-5.0mA

IB=-4.5mA IB=-4.0mA

IB=-3.5mA

-0.8

IB=-3.0mA

IB=-2.5mA

-0.6

IB=-2.0mA

-0.4

IB=-1.5mA

IB=-1.0mA

-0.2

IB=-0.5mA

0.0

0.0 -0.2 -0.4 -0.6 -0.8 -1.0

Collector-Emitter Voltage, VCE (V)

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10

IC=20IB

-1

VBE(SAT)

-0.1

VCE(SAT)

-0.01

-0.01

-0.1

-1

-10

Collector Current, IC (A)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R201-066.C

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