2SB1116A(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

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2SB1116A
(Rev.:2011)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SB1116/A

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

2SB1116

2SB1116A

VCBO

-60

V

-80

Collector to Emitter Voltage

2SB1116

2SB1116A

VCEO

-50

V

-60

Emitter to Base Voltage

VEBO

-6

V

Collector Current

DC

IC

Pulse(Note2)

ICM

-1

A

-2

A

Total Power Dissipation

PC

750

mW

Junction Temperature

Operating Temperature

Storage Temperature

TJ

TOPR

TSTG

+150

°C

-20 ~ +85

℃

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≦10ms, Duty cycle≦50%

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA

Base-Emitter Saturation Voltage(Note)

VBE(SAT) IC=-1A, IB=-50mA

Base Emitter On Voltage(Note)

VBE(ON) VCE=-2V, IC=-50mA

Collector Cut-Off Current

ICBO VCB=-60V, IE=0

Emitter Cut-Off Current

IEBO VEB=-6V, IC=0

DC Current Gain(Note)

hFE1

VCE=-2V,

IC=-100mA

2SB1116

2SB1116A

hFE2 VCE=-2V, IC=-1A

Transition Frequency

fT

VCE=-2V, IC=-100mA

Output Capacitance

COB VCB=-10V, IE=0, f=1MHz

Turn On Time

tON

VCC=-10V, IC=-100mA

IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V

Storage Time

tSTG

Fall Time

tF

Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%

MIN

-600

135

135

81

70

„ CLASSIFICATION OF hFE1

TYP

-0.2

-0.9

-650

120

25

0.07

0.7

0.07

MAX

-1.2

-700

-100

-100

600

400

UNIT

V

V

mV

nA

nA

MHz

pF

μs

μs

μs

RANK

hFE1

Y

135 ~ 270

G

200 ~ 400

L

300 ～ 600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-066.C

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