2SA814 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA814

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA814

2SA815

IC=-10mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1.0mA ,IC=0

VCEsat

Collector-emitter saturation voltage IC=-500mA; IB=B -50mA

VBE

Base-emitter on voltage

IC=-500mA ; VCE=-5V

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-150mA ; VCE=-5V

hFE-2

DC current gain

IC=-500mA ; VCE=-5V

COB

Collector output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-150mA ; VCE=-5V

‹ hFE-1 Classifications

O

Y

70-140

120-240

Product Specification

2SA814 2SA815

MIN TYP. MAX UNIT

-120

V

-100

-5

V

-0.5

V

-1.0

V

-1.0 μA

-1.0 μA

70

240

40

30

pF

10

30

MHz

2

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