2SA1812 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA1812

PNP Transistors

TY Semiconductor 

SSMMDD TTyyppee

TTrraannssiissttoorrss

Product specification

2SA1812

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Cob

ton

tstg

tf

Test conditons

IC=-50μA,IE=0

IC=-1mA,IB=0

IC=-50μA,IC=0

VCB=-400V

VEB=-6V

VCE=-5V, IC=-50mA

IC=-100mA, IB=-10mA

IC=-100mA, IB=-10mA

VCE=-5V, IC=-50mA, f=5MHz

VCB=-10V, IE=0, f=1MHz

IC=-100mA,RL=1.5KΩ,IB1=-IB2=-

10mA,VCC=-150V

Min Typ Max Unit

-400

V

-400

V

-7

V

-10 μA

-10 μA

82

270

-1 V

-1.2 V

12

MHz

18

pF

0.6

μs

2.7

μs

1

μs

■ hFE Classification

Marking

Rank

Range

AJP

P

82～180

AJQ

Q

120～270

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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