DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SA1812 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SA1812
Twtysemi
TY Semiconductor Twtysemi
2SA1812 Datasheet PDF : 2 Pages
1 2
SMD Type
Features
High breakdown voltage.
Low saturation voltage.
Transistors
Product specification
2SA1812
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-400
V
Collector-emitter Voltage
VCEO
-400
V
Emitter-base Voltae
VEBO
-7
V
Collector current
IC (DC)
-0.5
A
IC (Pulse) *1
-1
A
Collector power dissipation
PC
0.5
W
PC *2
2
W
Junction temperature
TJ
150
Storage temperature
TSTG
-55 to 150
*1 Singte pulse
*2 When mounted on a 40X40X0.7mm ceramic board.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]