2SA1600 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SA1600

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1600

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.3A

VBEsat Base-emitter saturation voltage

IC=-6A; IB=-0.3A

ICBO

Collector cut-off current

ICEO

At rated volatge

IEBO

Emitter cut-off current

At rated volatge

hFE

DC current gain

IC=-6A ; VCE=-2V

fT

Transition frequency

IC=-1.2A ; VCE=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-6A;IB1=-IB2=-0.6A ,

RL=5Ω;VBB2=-4V

MIN TYP. MAX UNIT

-40

V

-0.3

V

-1.2

V

-0.1

mA

-0.1

mA

70

50

MHz

0.3

μs

1.5

μs

0.5

μs

2

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