2N918 Ver la hoja de datos (PDF) - Advanced Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N918 Datasheet PDF : 1 Pages
| |||
2N918
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N918 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC
50 mA
VCE
PDISS
TJ
TSTG
15 V
300 mW @ TC = 25 OC
200 mW @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 3.0 mA
BVCBO
ICBO
BVEBO
IC = 1.0 µA
VCB = 15 V
VCB = 15 V
IE = 10 µA
TA = 150 OC
hFE
VCE = 1.0 V IC = 3.0 mA
VCE(SAT)
IC = 10 mA
IB = 1.0 mA
VBE(SAT)
IC = 10 mA
IB = 1.0 mA
NONE
MINIMUM TYPICAL MAXIMUM
15
30
0.01
1.0
3.0
20
0.4
1.0
UNITS
V
V
µA
V
---
V
V
ft
VCE = 10 V
IC = 4.0 mA
Cob
VCB = 0 V
VCB = 10 V
Cib
VEB = 0.5 V
f = 100 MHz
600
f = 140 KHz
f = 140 KHz
f = 140 KHz
MHz
3.0
pF
1.7
2.0
pF
NF
VCE = 6.0 V
IC = 1.0 mA
Gpe
VCB = 12 V
IC = 6.0 mA
Pout
η
VCB = 15 V
IC = 8.0 mA
f = 60 MHz
f = 200 MHz
15
f = 500 MHz
30
25
6.0
dB
dB
mW
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Share Link: 