HY51V18163HG Ver la hoja de datos (PDF) - Hynix Semiconductor
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HY51V18163HG Datasheet PDF : 12 Pages
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HY51V(S)18163HG/HGL
DC CHARACTERISTICS (Vcc = 3.3V +/- 10%, TA=0 to 70°C)
Symbol
Parameter
VOH
Output Level
Output Level voltage(Iout= -2mA)
VOL
Output Level
Output Level voltage(Iout=2mA)
50ns
Operating current
ICC1 Average power supply operating current
60ns
( /RAS, /CAS Cycling : tRC = tRC min)
70ns
ICC2
Standby current (TTL interface)
Power supply standby current
(/RAS, /CAS=VIH, Dout = High-Z)
/RAS only refresh current
50ns
Average power supply current
ICC3 /RAS only refresh mode
60ns
(tRC= tRC min)
70ns
50ns
EDO page mode current
ICC4 Average power supply current
60ns
EDO page mode (tPC=tPC min)
70ns
CMOS interface ( /RAS, /CAS >= Vcc-0.2V, Dout = High-Z)
ICC5
Standby current ( L-version)
50ns
ICC6 /CAS-before-/RAS refresh current (tRC=tRC min)
60ns
70ns
ICC7
Battery back up operating current ( standby with CBR ref.)
(CBR refresh, tRC=31.3us, tRAS <= 0.3us, Dout = High-Z, CMOS interface)
ICC8
Standby current
(RAS=VIH, /CAS=VIL, Dout=Enable)
ICC9
Self refresh current
(/RAS, /CAS <=0.2V, Dout=High-Z)
II(L) Input leakage current, Any input (0V<= Vin<=4.6V)
IO(L) Output leakage current, (Dout is disabled, 0V<= Vout<=4.6V)
Min Max Unit
2.4
Vcc
V
0
0.4
V
-
190
-
170
mA
-
150
-
2
mA
-
190
-
170
mA
-
150
-
185
-
165
mA
-
145
-
1
mA
-
150
uA
-
190
-
170
mA
-
150
-
400
uA
-
5
mA
-
250
uA
-10
10
uA
-10
10
uA
Note :
1. Icc depends on output load condition when the device is selected, Icc(max) is specified at the output open condition
2. Address can be changed once or less while /RAS=VIL
3. Address can be changed once or less while /CAS=VIH
4. /CAS = L (<=0.2) while /RAS=L (<=0.2)
5. L-Version
Note
1, 2
2
1, 3
5
4, 5
1
5
Rev.0.1/Apr.01
5
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