2N7002 Ver la hoja de datos (PDF) - PANJIT INTERNATIONAL

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componentes Descripción

Fabricante

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PANJIT INTERNATIONAL 

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

VOLTAGE 60 Volts

CURRENT 115 mAmp

PACKAGE

DESCRIPTION

• N-channel enhancement mode field effect transistor, designed for high speed pulsed

amplifier and driver applications, which is manufactored by the N-Channel DMOS

process.

FEATURES

• High density cell design for low RDS(ON).

• Voltage controlled small signal switching.

• Rugged and reliable.

• High saturation current capability.

• High-speed switcing.

• CMOS logic compatible input.

• Not thermal runaway.

• No secondary breakdown.

SOT-23

D

ABSOLUTE MAXIMUM RATINGS

TA = 25OC Unless otherwise noted.

Drain-Source Voltage

Parameter

Drain-Gate Voltage (Rgs ≤ 1MΩ)

Gate Source Voltage -Continuous

-No Repetitive (tp<50µs)

Maximum Drain Current -Continuous

-Pulsed

Maximum POwer Dissipation Derated Above 25OC

Operation and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Symbol

V DSS

VDRG

V GSS

ID

PD

TJ , TSTG

RθJA

G

S

2N7002

60

60

± 20

± 20

115

800

200

-55 to +150

625

Units

V

V

V

mA

mW

mW / OC

OC / W

Part Number: 2N7002

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