2N6660 Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
2N6660 Datasheet PDF : 2 Pages
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Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
2N6660
1.1A
3A
2N6661
0.9A
3A
* ID (continuous) is limited by max rated Tj.
Power Dissipation
@ TC = 25°C
6.25W
6.25W
θjc
°C/W
20
20
θja
°C/W
125
125
2N6660/2N6661
IDR*
1.1A
0.9A
IDRM
3.0A
3.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source
Breakdown Voltage
2N6660
2N6661
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
60
V
90
0.8
2.0
V
-3.8 -5.5 mV/°C
100
nA
10
µA
500
ID(ON)
ON-State Drain Current
1.5
RDS(ON)
Static Drain-to-Source
ON-State Resistance
All
2N6660
A
5.0
3.0
Ω
2N6661
4.0
GFS
Forward Transconductance
170
m
CISS
Input Capacitance
50
COSS
Common Source Output Capacitance
40
pF
CRSS
Reverse Transfer Capacitance
10
t(ON)
t(OFF)
Turn-ON Time
Turn-OFF Time
10
ns
10
VSD
Diode Forward Voltage Drop
1.2
V
trr
Reverse Recovery Time
350
ns
Notes:
1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Conditions
VGS = 0V, ID = 10µA
VGS = VDS, ID =1mA
VGS = VDS, ID =1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating,
TA = 125°C
VGS = 10V, VDS = 10V
VGS= 5V, ID = 0.3A
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A
VDS = 25V, ID = 0.5A
VGS = 0V, VDS = 24V
f = 1 MHz
VDD = 25V,
ID = 1A, RGEN = 25Ω
VGS = 0V, ISD = 1A
VGS = 0V, ISD = 1A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
7-4
VDD
RL
OUTPUT
D.U.T.
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