2N5631 Ver la hoja de datos (PDF) - ON Semiconductor
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Fabricante
2N5631 Datasheet PDF : 8 Pages
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2N5631 2N6031
1.0
0.5
D = 0.5
0.2
0.2
0.1
0.1 0.05
0.05
0.02 SINGLE PULSE
0.02
0.01
0.01
0.02
0.05 0.1 0.2
0.5
θJC(t) = r(t) θJC
P(pk)
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
Figure 4. Thermal Response
500 1000 2000
20
5.0Ăms 1.0Ăms
10
7.0
dc
5.0
0.5Ăms
3.0
TJ = 200°C
50Ăms
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
1.0
THERMALLY LIMITED @ TC = 25°C
0.7
0.5
CURVES APPLY BELOW
RATED VCEO
0.3
2N5631, 2N6031
0.2
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
NPN
2N5631
5.0
3.0
ts
2.0
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
PNP
2N6031
4.0
3.0
2.0
1.0
TJ = 25°C
ts
IB1 = IB2
IC/IB = 10
VCE = 30 V
1.0
0.7
tf
0.6
0.4
0.3
tf
0.5
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
0.2
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
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