2N5210 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N5210 Datasheet PDF : 7 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 0.1 mA, IE = 0
VCB = 35 V, IE = 0
VEB = 3.0 V, IC = 0
50
V
50
V
50
nA
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
IC = 1.0 mA, VCE = 5.0 V
200
600
250
250
0.7
V
0.85
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 500 µA,VCE = 5.0 V,
30
f= 20 MHz
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
250
900
NF
Noise Figure
IC = 20 µA, VCE = 5.0 V,
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
IC = 20 µA, VCE = 5.0 V,
RS = 10 kΩ, f = 1.0 kHz
2.0
dB
3
3.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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