2N5210 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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2N5210

NPN General Purpose Amplifier

Fairchild Semiconductor 

2N5210/MMBT5210

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1µA to 50 mA.

CBE

C

TO-92

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

50

50

4.5

100

-55 to +150

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

E

B SOT-23

Mark: 3M

Units

V

V

V

mA

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Max.

2N5210

MMBT5210

625

350

5.0

2.8

83.3

200

357

Units

mW

mW/°C

°C/W

°C/W

 2002 Fairchild Semiconductor Corporation

2N5210, Rev B

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