2N5109 Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

2N5109

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• 1.2 GHz Current-Gain Bandwidth Product @ 50mA

• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz

2N5109

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver,

driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TC = 75º C (1)

Derate above 25º C

Note 1. Total Device dissipation at TA = 25º C is 1 Watt.

Value

20

40

3.0

400

2.5

20

Unit

Vdc

Vdc

Vdc

mA

Watts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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