2N4403 Ver la hoja de datos (PDF) - Vishay Semiconductors
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2N4403 Datasheet PDF : 3 Pages
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2N4403
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
DC Current Gain
–VCE = 1 V, –IC = 0.1 mA
30
—
–VCE = 1 V, –IC = 1 mA
60
—
hFE
–VCE = 1 V, –IC = 10 mA
100
—
–VCE = 2 V, –IC = 150 mA 100
—
–VCE = 2 V, –IC = 500 mA 20
—
Collector Cutoff Current
–ICEV –VEB = 0.4 V, –VCE = 35 V —
—
Base Cutoff Current
–IBEV –VEB = 0.4 V, –VCE = 35 V —
—
Collector-Emitter Saturation Voltage(1)
–VCEsat
–IC = 150 mA, –IB = 15 mA
–IC = 500 mA, –IB = 50 mA
—
—
—
—
Base-Emitter Saturation Voltage(1)
–VBEsat
–IC = 150 mA, –IB = 15 mA
–IC = 500 mA, –IB = 50 mA
0.75
—
—
—
Collector-Emitter Breakdown Voltage
–V(BR)CEO
–IC = 1 mA, IB = 0
40
—
Collector-Base Breakdown Voltage
–V(BR)CBO –IC = 0.1 mA, IE = 0
40
—
Emitter-Base Breakdown Voltage
–V(BR)EBO –IE = 0.1 mA, IC = 0
5.0
—
Input Impedance
hie
–VCE = 10 V, –IC = 1 mA,
f = 1 kHz
1.5
—
Voltage Feedback Ratio
hre
–VCE = 10 V, –IC = 1 mA,
f = 1 kHz
0.1 • 10-4
—
Current Gain-Bandwidth Product
fT
–VCE = 10 V, –IC = 20 mA
f = 100 MHz
200
—
Collector-Base Capacitance
CCB
–VCB = 10 V, IE = 0,
f = 1.0 MHz
—
—
Emitter-Base Capacitance
CEB
–VEB = 0.5 V, IC = 0
f = 1.0 MHz
—
—
Small Signal Current Gain
hfe
–VCE = 10 V, –IC = 1 mA
f = 1 kHz
60
—
Output Admittance
hoe
–VCE = 10 V, –IC = 1 mA
f = 1 kHz
1.0
—
Notes:
(1) Pulse test: Pulse width ≤ 300µs - Duty cycle ≤ 2%
Max
—
—
—
300
—
100
100
0.40
0.75
0.95
1.30
—
—
—
15
8 • 10-4
—
8.5
30
500
100
Unit
—
nA
nA
V
V
V
V
V
kΩ
—
MHz
pF
pF
—
µS
www.vishay.com
2
Document Number 88118
08-May-02
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