2N3772 Ver la hoja de datos (PDF) - DC COMPONENTS
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2N3772 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N3772
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for linear amplifiers, series pass regulators,
and inductive switching applications.
Pinning
1 = Base
2 = Emitter
Case = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VCEX
VEBO
IC
IC
PD
TJ
TSTG
Rating
Unit
100
V
60
V
80
V
7
V
30
A
30
A
150
W
+200
oC
-65 to +200
oC
TO-3
.135
(3.43)
Max
(319.5.9763)Max
.875(22.23)
.759(19.28)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.225(5.72)
.205(5.20)
1
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.169(4.30)
.151(3.84)
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
Case: Collector
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
Symbol Min
Typ
Max
VCEO(sus)
60
-
-
VCEX(sus)
80
-
-
VCER(sus)
70
-
-
ICEO
-
-
10
-
ICEX
-
-
5
-
10
ICBO
-
-
5
IEBO
-
-
5
VCE(sat)1
-
-
1.4
VCE(sat)2
-
-
4
VBE(on)
-
-
2.2
hFE1
15
-
60
hFE2
5
-
-
Second Breakdown Collector with
Base Forward Bias
Is/b
2.5
-
-
Current Gain - Bandwidth Product
Small-Signal Current Gain
fT
0.2
-
-
hfe
40
-
-
(1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Unit
V
V
V
mA
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
Test Conditions
IC=0.2A, IB=0
IC=0.2A, VBE(off)=1.5V, RBE=100Ω
IC=0.2A, RBE=100Ω
VCE=50V, IB=0
VCE=100V, VBE(off)=1.5V
VCE=30V, VBE(off)=1.5V, TC=150oC
VCB=50V, IE=0
VBE=7V, IC=0
IC=10A, IB=1.5A
IC=20A, IB=4A
IC=10A, VCE=4V
IC=10A, VCE=4V
IC=20A, VCE=4V
VCE=60V, t=1.0s, Non-repetitive
IC=1A, VCE=4V, f=50KHz
IC=1A, VCE=4V, f=1KHz
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