IXGH12N100 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH12N100 Datasheet PDF : 2 Pages
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IXGH12N100 IXGH12N100A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
IC = IC90; VCE = 10 V,
6 10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
C
oes
Cres
Qg
Q
ge
Qgc
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
750
pF
80
pF
30
pF
65 90 nC
8 20 nC
24 45 nC
td(on)
Inductive load, TJ = 25°C
100
ns
tri
td(off)
IC = IC90, VGE = 15 V, L = 300 mH,
VCE =.0.8 VCES, RG = Roff = 120 W
200
ns
850 1000 ns
tfi
Remarks: Switching times may
12N100
800 1000 ns
increase for VCE (Clamp) > 0.8 VCES, 12N100A
500 700 ns
higher T or increased R
Eoff
J
G
12N100
2.5
mJ
12N100A
1.5 3.0 mJ
td(on)
100
ns
t
ri
Inductive load, TJ = 125°C
200
ns
E
on
IC = IC90, VGE = 15 V, L = 300 mH
1.1
mJ
t
d(off)
tfi
VCE = 0.8 VCES, RG = Roff = 120 W
Remarks: Switching times may
12N100
900
1250
ns
ns
increase for VCE (Clamp) > 0.8
12N100A
950
ns
Eoff
VCES, higher TJ or increased RG
12N100
3.5
mJ
12N100A
2.2
mJ
R
thJC
RthCK
1.25 K/W
0.25
K/W
IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1
data sheet.
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
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2-2
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